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FEATURES Bandwidth >400 MHz Low Insertion Loss and On Resistance: 2.2 Typical On-Resistance Flatness 0.3 Typical Single 3 V/5 V Supply Operation Very Low Distortion: <0.3% Low Quiescent Supply Current (1 nA Typical) Fast Switching Times tON 6 ns tOFF 3 ns TTL/CMOS Compatible
Low Voltage 400 MHz Quad 2:1 Mux with 3 ns Switching Time ADG774A
FUNCTIONAL BLOCK DIAGRAM
ADG774A
S1A D1 S1B S2A D2 S2B S3A D3 S3B S4A D4 S4B 1 OF 2 DECODER
EN
IN
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG774A is a monolithic CMOS device comprising four 2:1 multiplexer/demultiplexers with high impedance outputs. The CMOS process provides low power dissipation yet gives high switching speed and low on resistance. The on-resistance variation is typically less than 0.5 over the input signal range. The bandwidth of the ADG774A is typically 400 MHz and this, coupled with low distortion (typically 0.3%), makes the part suitable for switching of high-speed data signals. The on-resistance profile is very flat over the full analog input range ensuring excellent linearity and low distortion. CMOS construction ensures ultralow power dissipation. The ADG774A operates from a single 3.3 V/5 V supply and is TTL logic compatible. The control logic for each switch is shown in the Truth Table. These switches conduct equally well in both directions when ON. In the OFF condition, signal levels up to the supplies are blocked. The ADG774A switches exhibit break-before-make switching action.
1. Wide bandwidth data rates >400 MHz. 2. Ultralow Power Dissipation. 3. Low leakage over temperature. 4. Break-Before-Make Switching. This prevents channel shorting when the switches are configured as a multiplexer. 5. Crosstalk is typically -70 dB @ 10 MHz. 6. Off isolation is typically -65 dB @ 10 MHz.
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Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781/329-4700 www.analog.com Fax: 781/326-8703 (c) Analog Devices, Inc., 2001
ADG774A-SPECIFICATIONS
SINGLE SUPPLY1 (V
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON, tON (EN) tOFF, tOFF (EN) Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB Distortion Charge Injection CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.001
NOTES 1 Temperature ranges are as follows: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
DD
=5V
10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
B Version TMIN to 25 C TMAX 0 to 2.5 2.2 3.5 0.15 0.5 0.3 0.6 0.001 0.1 0.001 0.1 0.001 0.1 4
Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min dB typ dB typ MHz typ % typ pC typ pF typ pF typ pF typ
Test Conditions/Comments
VD = 0 V to 1 V; IS = -10 mA VD = 0 V to 1 V; IS = -10 mA VD = 0 V to 1 V; IS = -10 mA
0.25 0.25 0.25 2.4 0.8
VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V; Test Circuit 2 VD = 3 V, VS = 1 V; VD = 1 V, VS = 3 V; Test Circuit 2 VD = VS = 3 V; VD = VS = 1 V; Test Circuit 3
0.001 0.1 3 6 12 3 6 3 1 -65 -70 400 0.3 6 5 7.5 12
VIN = VINL or VINH
CL = 35 pF, RL = 50 ; VS = 2 V; Test Circuit 4 CL = 35 pF, RL = 50 ; VS = 2 V; Test Circuit 4 CL = 35 pF, RL = 50 ; VS1 = VS2 = 2 V; Test Circuit 5 f = 10 MHz; RL = 50 ; Test Circuit 7 f = 10 MHz; RL = 50 ; Test Circuit 8 Test Circuit 6, RL = 50 ; RL = 100 CL = 1 nF; Test Circuit 9, VS = 0 V
1
A max A typ
VDD = 5.5 V Digital Inputs = 0 V or VDD
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ADG774A SINGLE SUPPLY
Parameter ANALOG SWITCH Analog Signal Range On Resistance (RON) On Resistance Match Between Channels (RON) On Resistance Flatness (RFLAT(ON)) LEAKAGE CURRENTS Source OFF Leakage IS (OFF) Drain OFF Leakage ID (OFF) Channel ON Leakage ID, IS (ON) DIGITAL INPUTS Input High Voltage, VINH Input Low Voltage, VINL Input Current IINL or IINH CIN, Digital Input Capacitance DYNAMIC CHARACTERISTICS2 tON, tON (EN) tOFF, tOFF (EN) Break-Before-Make Time Delay, tD Off Isolation Channel-to-Channel Crosstalk Bandwidth -3 dB Distortion Charge Injection CS (OFF) CD (OFF) CD, CS (ON) POWER REQUIREMENTS IDD 0.001
NOTES 1 Temperature ranges are as follows: B Version, -40C to +85C. 2 Guaranteed by design, not subject to production test. Specifications subject to change without notice.
1
(VDD = 3 V
10%, GND = 0 V. All specifications TMIN to TMAX unless otherwise noted.)
B Version TMIN to 25 C TMAX 0 to 1.5 4 6 0.15 0.5 1.5 3 0.001 0.1 0.001 0.1 0.001 0.1 7
Unit V typ max typ max typ max nA typ nA max nA typ nA max nA typ nA max V min V max A typ A max pF typ ns typ ns max ns typ ns max ns typ ns min dB typ dB typ MHz typ % typ pC typ pF typ pF typ pF typ
Test Conditions/Comments
VD = 0 V to 1 V; IS = -10 mA VD = 0 V to 1 V; IS = -10 mA VD = 0 V to 1 V; IS = -10 mA
0.25 0.25 0.25 2.0 0.4
VD = 2 V, VS = 1 V; VD = 1 V, VS = 2 V; Test Circuit 2 VD = 2 V, VS = 1 V; VD = 1 V, VS = 2 V; Test Circuit 2 VD = VS = 2 V; VD = VS = 1 V; Test Circuit 3
0.001 0.1 3 7 14 4 8 3 1 -65 -70 400 1.5 4 5 7.5 12
VIN = VINL or VINH
CL = 35 pF, RL = 50 ; VS = 1.5 V; Test Circuit 4 CL = 35 pF, RL = 50 ; VS = 1.5 V; Test Circuit 4 CL = 35 pF, RL = 50 ; VS1 = VS2 = 1.5 V; Test Circuit 5 f = 10 MHz; RL = 50 , Test Circuit 7 f = 10 MHz; RL = 50 , Test Circuit 8 Test Circuit 6; RL = 50 RL = 100 CL = 1 nF; Test Circuit 9, VS = 0 V
1
A max A typ
VDD = 3.3 V Digital Inputs = 0 V or VDD
Table I. Truth Table
EN 1 0 0
IN X 0 1
D1 Hi-Z S1A S1B
D2 Hi-Z S2A S2B
D3 Hi-Z S3A S3B
D4 Hi-Z S4A S4B
Function DISABLE IN = 0 IN = 1
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ADG774A
ABSOLUTE MAXIMUM RATINGS 1
(TA = 25C unless otherwise noted)
TERMINOLOGY
VDD to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 V to +6 V Analog, Digital Inputs2 . . . . . . . . . . . -0.3 V to VDD + 0.3 V or . . . . . . . . . . . . . . . . . . . . . . . 30 mA, Whichever Occurs First Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . 100 mA Peak Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mA (Pulsed at 1 ms, 10% Duty Cycle max) Operating Temperature Range Industrial (B Version) . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature Range . . . . . . . . . . . . -65C to +150C Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . 150C QSOP Package, Power Dissipation . . . . . . . . . . . . . . 566 mW JA Thermal Impedance . . . . . . . . . . . . . . . . . . 149.97C/W Lead Temperature, Soldering Vapor Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . . . 215C Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 220C
NOTES 1 Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those listed in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Only one absolute maximum rating may be applied at any one time. 2 Overvoltages at IN, S or D will be clamped by internal diodes. Current should be limited to the maximum ratings given.
PIN CONFIGURATION (QSOP)
VDD EN S4A
IN 1 S1A 2 S1B 3 D1 4
16 15 14
S4B TOP VIEW S2A 5 (Not to Scale) 12 D4
13
ADG774A
S2B 6 D2 7 GND 8
11 10 9
S3A S3B D3
Most Positive Power Supply Potential. Ground (0 V) Reference. Source Terminal. May be an input or output. Drain Terminal. May be an input or output. Logic Control Input. Logic Control Input. Ohmic resistance between D and S. On Resistance match between any two channels i.e., RON max - RON min. RFLAT(ON) Flatness is defined as the difference between the maximum and minimum value of on resistance as measured over the specified analog signal range. Source Leakage Current with the switch "OFF." IS (OFF) ID (OFF) Drain Leakage Current with the switch "OFF." ID, IS (ON) Channel Leakage Current with the switch "ON." VD (VS) Analog Voltage on Terminals D, S. CS (OFF) "OFF" Switch Source Capacitance. CD (OFF) "OFF" Switch Drain Capacitance. CD, CS (ON) "ON" Switch Capacitance. tON Delay between applying the digital control input and the output switching on. See Test Circuit 4. tOFF Delay between applying the digital control input and the output switching Off. tD "OFF" time or "ON" time measured between the 90% points of both switches, when switching from one address state to another. See Test Circuit 5. Crosstalk A measure of unwanted signal that is coupled through from one channel to another as a result of parasitic capacitance. Off Isolation A measure of unwanted signal coupling through an "OFF" switch. Bandwidth Frequency response of the switch in the ON state measured at 3 dB down. Distortion RFLAT(ON)/RL
VDD GND S D IN EN RON RON
ORDERING GUIDE
Model ADG774ABRQ
Temperature Range -40C to +85C
Package Descriptions RQ = 0.15" Quarter Size Outline Package (QSOP)
Package Options RQ-16
CAUTION ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily accumulate on the human body and test equipment and can discharge without detection. Although the ADG774A features proprietary ESD protection circuitry, permanent damage may occur on devices subjected to high-energy electrostatic discharges. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality.
WARNING!
ESD SENSITIVE DEVICE
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Typical Performance Characteristics-ADG774A
20 TA = 25 C 16 16 15 VDD = 3.0V 12 12 20 TA = 25 C 20 VDD = 5V
RON -
RON -
VDD = 5.0V 8 VDD = 4.5V 4 VDD = 5.5V 0 2 3 4 5 0 1 VS OR VD OR DRAIN SOURCE VOLTAGE - V
RON -
10
8
VDD = 2.7V 5 +25 C
+85 C
4 VDD = 3.3V 0 1.0 1.5 2.0 2.5 3.0 0 0.5 VS OR VD OR DRAIN SOURCE VOLTAGE - V 0 -40 C 0 1 2 3 4 5 VS OR VD OR DRAIN SOURCE VOLTAGE - V
TPC 1. On Resistance as a Function of VD (VS) for Various Single Supplies
TPC 2. On Resistance as a Function of VD (VS) for Various Single Supplies
TPC 3. On Resistance as a Function of VD (VS) for Different Temperatures with 5 V Single Supplies
0.025
20 VDD = 3V
0.025 0.020 0.015 VDD = 5.0V VSS = 0V TEMP = 25 C
0.020 0.015
CURRENT - nA
VDD = 3.0V VSS = 0V TEMP = 25 C ID (OFF) ID, IS (ON)
15
CURRENT - nA
0.010 0.005 0 -0.005 -0.010 -0.015 IS (OFF) IS, ID (ON) ID (OFF)
0.010 0.005 0 -0.005 -0.010 -0.015 -0.020 IS (OFF)
+85 C RON - 10
+25 C 5
-40 C 0 0 0.5 1.0 1.5 2.0 2.5 3.0 VS OR VD OR DRAIN SOURCE VOLTAGE - V
-0.020 -0.025 0 VS 3 2 1 VS - V(VD = VDD - VS) 4
-0.025 0 VS
0.5
1.0 1.5 2.0 VS - V(VD = VDD - VS)
2.5
3.0
TPC 4. On Resistance as a Function of VD (VS) for Different Temperatures with 3 V Single Supplies
TPC 5. Leakage Current as a Function of VD (VS)
TPC 6. Leakage Current as a Function of VD (VS)
0.05 0.04 0.03 VDD = 5.0V VSS = 0V TEMP = 25 C VD = 3V/1V VS = 1V/3V ID (OFF)
0.05 0.04 0.03
CURRENT - nA
ID, IS (ON)
0
CURRENT - nA
0.02 0.01 0 -0.01 -0.02 -0.03 -0.04 -0.05 5
0.02 0.01 0 -0.01 -0.02 -0.03 -0.04 -0.05
IS (OFF)
ATTENUATION - dB
VDD = 3.0V VSS = 0V TEMP = 25 C VD = 2V/1V VS = 1V/2V
ID, IS (ON)
-20
-40
IS (OFF)
ID (OFF)
-60
-80
15
25 35 45 55 65 TEMPERATURE - C
75
85
5
15
25 35 45 55 65 TEMPERATURE - C
75
85
-100 0.3
0.1
1 10 100 FREQUENCY - MHz
1000
TPC 7. Leakage Current as a Function of Temperature
TPC 8. Leakage Current as a Function of Temperature
TPC 9. Off Isolation vs. Frequency
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-5-
ADG774A
0 0
0 -1
-20
ATTENUATION - dB
ON RESPONSE - dB
-2
-5
QINJ - pC
VDD = 3V
-40
-3 -4 VDD = 5V -5 -6
-60
-10
-80
-100 0.3
0.1
1 10 100 FREQUENCY - MHz
1000
-15 0.3
-7
0.1 1 10 100 FREQUENCY - MHz 1000
0
0.5
1.0 1.5 VOLTAGE - V
2.0
2.5
TPC 10. Crosstalk vs. Frequency
TPC 11. Bandwidth
TPC 12. Charge Injection vs. Source Voltage
10 BASE TX+ TX1 10 BASE TX- 100 BASE TX+ TX2 100 BASE TX- RJ45 10 BASE TX+ RX1 10 BASE TX- TRANSFORMER 100 BASE TX+ RX2 100 BASE TX-
ADG774A
10 BASE TX
100 BASE TX
Figure 1. Full Duplex Transceiver
TX1
120 RX1
100
Figure 2. Loop Back
Figure 3. Line Termination
Figure 4. Line Clamp
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ADG774A Test Circuits
IDS V1 S D
IS (OFF) A VS S D
ID (OFF) A VD
NC = NO CONNECT NC S D
ID (ON) A VD
VS
RON = V1/IDS
Test Circuit 1. On Resistance
Test Circuit 2. Off Leakage
Test Circuit 3. On Leakage
5V 0.1 F VIN VDD S VS IN EN GND D RL 100 VOUT 90% CL 35pF VOUT tON tOFF 90% 3V 50% 50%
Test Circuit 4. Switching Times
5V 0.1 F
VDD S1A D1 VS S1B VS DECODER EN GND RL 100 CL 35pF VOUT VOUT VIN
3V 50% 0V 50% VS tD tD 50% 50%
Test Circuit 5. Break-Before-Make Time Delay
VDD 0.1 F
VDD 0.1 F
ADG774A
NETWORK ANALYZER S1A 50
ADG774A
NETWORK ANALYZER S1A 50 50 VS
IN
VS
IN
VIN
D1 50 EN GND
VOUT
VIN
D1 50 EN GND
VOUT
Test Circuit 6. Bandwidth
Test Circuit 7. Off Isolation
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ADG774A
VDD 0.1 F
ADG774A
S1A S2A
NETWORK ANALYZER 50 VS VOUT RL 50
IN D2 VIN EN GND D1 50
Test Circuit 8. Channel-to-Channel Crosstalk
5V
VDD
ADG774A
RS VS S1A S1B S2A S2B S3A S3B S4A S4B 1 OF 2 DECODER EN IN CL 1nF CL 1nF CL 1nF CL 1nF D4 VOUT D3 VOUT D2 VOUT VOUT QINJ = CL VOUT VOUT D1 VOUT VIN 3V
Test Circuit 9. Charge Injection
OUTLINE DIMENSIONS
Dimensions shown in inches and (mm).
16-Lead QSOP (RQ-16)
0.197 (5.00) 0.189 (4.80)
16
9
0.157 (3.99) 0.150 (3.81)
1 8
0.244 (6.20) 0.228 (5.79)
PIN 1 0.059 (1.50) MAX
0.069 (1.75) 0.053 (1.35)
0.010 (0.25) 0.004 (0.10)
0.025 (0.64) BSC
8 0 0.012 (0.30) SEATING 0.010 (0.20) 0.008 (0.20) PLANE 0.007 (0.18)
0.050 (1.27) 0.016 (0.41)
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PRINTED IN U.S.A.
C02373-1.5-6/01(0)

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